An Effective Channel Mobility-Based Analytical On-Current Model for Polycrystalline Silicon Thin-Film Transistors

Abstract

A physical-based analytical ON-state drain-current model was developed based on a mobility model including both grain boundary barrier-controlled carrier conduction and gate voltage dependent mobility degradation. Mobility variation along the conduction channel caused by both effects was taken into account. The derived drain-current can be approximated by a previously followed form, however, with mobility term modified and saturation factor included. Our experimental effective channel mobility and above-threshold drain-current data from both low-temperature and high-temperature processed polycrystalline silicon thin-film transistors can be accurately fitted by the model, without introducing any empirical or artificial factors