Radio-frequency performance of a state-of-the-art 0.5-μm-rule thin-film SOI power MOSFET

Abstract

A state-of-the-art 0.5-/spl mu/m-rule thin-film SOI power MOSFET was fabricated to evaluate its radio-frequency (RF) performance. The impact of the device structural parameters, such as channel length and drain offset length, on the RF performance of thin-film SOI power MOSFETs was also investigated. The fabricated device with channel length of 0.5 /spl mu/m and drain offset length of 0.4 /spl mu/m showed excellent performance. Its breakdown voltage was more than 10 V, which is sufficient for a lithium ion battery to be used as a power source. Its cutoff and maximum oscillation frequencies were 14.7 and 19 GHz, respectively. Its power-added efficiency at 2 GHz was 64%.