Vapor Growth of InAs

Abstract

Epitaxial InAs has been grown on InAs substrates with (100), (110), (111)A and (111)B orientations by using the reaction of AsCl3 with indium or polycrystalline InAs. Mirror-like surfaces of the grown layers are obtained on (100) and (111)B planes. The activation energies of the surface reactions of (100), (110), (111)A and (111)B planes are 55, 7, 33 and 46 kcal/mol, respectively. The carrier concentration of the grown layer decreases with increasing AsCl3 flow rate in the region where the growth rate is limited thermodynamically and is independent of AsCl3 flow rate in the region where the growth rate is limited by the surface reaction. The main donor impurity of the grown layers has been found not to be silicon in contrast with GaAs. Heat treatment of the grown layer changes the carrier concentration to a value peculiar to the temperature of the heat treatment. A mobility value of 170,000 cm2/V·sec at 77 K has been measured, which is higher than the value previously reported.