Low power consumption InAlAs-InGaAs-InP HBT SPDT PIN diode X-band switch

Abstract

Results for the first monolithic single-pole, double-throw (SPDT) X-band PIN diode switch fabricated with InAlAs-InGaAs HBTs lattice matched to InP are reported. The switch achieves performance similar to that of a GaAs implementation but with half the power consumption. The insertion loss is 0.89 dB and the off-isolation is >35 dB at 10 GHz. The IP3 is 29.6 dBm and the total power consumption is 10.2 mW. Monolithic integration of PIN diodes with an InP-based HBT process provides monolithic switch functions for use in microwave and millimeter-wave communication systems.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>