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A study of phase equilibria and heterojunctions in Ga–In–As–Sb quaternary system
30
Citations
9
References
1978
Year
Wide-bandgap SemiconductorEngineeringPhase EquilibriaGa–in–as–sb Quaternary SystemLaser ApplicationsSolidus DataSemiconductor LasersQuantum MaterialsPhase SeparationCompound SemiconductorMaterials SciencePhysicsCrystalline DefectsCondensed Matter TheorySolid-state PhysicPhase DiagramPhase EquilibriumCondensed Matter PhysicsApplied PhysicsOptoelectronics
Abstract The phase diagram of the Ga–In–As–Sb quaternary system has been determined experimentally and also has been treated on the base of thermodynamic calculations. The liquidus data were obtained by DTA and solidus data were determined using electron microprobe analysis on LPE‐layers of Ga x In 1– x As y Sb 1– y on GaSb and InAs substrates. Isolattice‐parameter heterostructures prepared on these substrates were free of mismatch dislocations and suitable for application to light‐emitting diodes and semiconductor lasers.
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