A design technique for a 60 GHz-bandwidth distributed baseband amplifier IC module

Abstract

A DC-60 GHz, 9 dB distributed amplifier IC module is fabricated with 0.15 /spl mu/m InAlAs-InGaAs low-noise HEMTs with 155 GHz f/sub T/ and 234 GHz f/sub max/. The device is mounted in a metal package with 1.8 mm coaxial cable signal interfaces. The package is specially designed using three-dimensional electromagnetic field analyses, resulting in very flat frequency characteristics of the module within 1.5 dB gain ripples over the entire bandwidth. A multichip module loaded with two amplifier ICs in cascade is also fabricated, and operates at a 17.5 dB gain from 60 kHz to 48 GHz. The 1 dB gain compression output power is about 5 dBm for both modules. The noise figure of the single-chip module is approximately 4 dB over a 10-40 GHz frequency range.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>