Publication | Open Access
Disentangling the magnetoelectric and thermoelectric transport in topological insulator thin films
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Citations
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References
2015
Year
EngineeringTopological MaterialsSpin-charge ConversionTransport StudiesTopological MagnetismMagnetismSemiconductorsQuantum MaterialsSpin-charge-orbit ConversionPhysicsTopological MaterialSign AnomalyThermoelectric TransportNatural SciencesTopological InsulatorCondensed Matter PhysicsApplied PhysicsThermoelectric MaterialSurface Dirac FermionsThin FilmsTopological Heterostructures
We report transport studies on ${(\mathrm{B}{\mathrm{i}}_{1\ensuremath{-}x}\mathrm{S}{\mathrm{b}}_{x})}_{2}\mathrm{T}{\mathrm{e}}_{3}$ topological insulator thin films with tunable electronic band structure. We find a doping and temperature regime in which the Hall coefficient is negative indicative of electron-type carriers, whereas the Seebeck coefficient is positive indicative of hole-type carriers. This sign anomaly is due to the distinct transport behaviors of the bulk and surface states: the surface Dirac fermions dominate magnetoelectric transport while the thermoelectric effect is mainly determined by the bulk states. These findings may inspire new ideas for designing topological insulator-based high-efficiency thermoelectric devices.
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