Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 11 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesOptoelectronic DevicesOptoelectronic MaterialsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsActivation EnergyBand GapElectrical PropertiesHall EffectHall Effect MeasurementsHeterostructure DevicesOhmic ContactsThreshold Voltage
In this paper we report the implementation of low resistance ohmic contacts to p-type ZnSSe and ZnMgSSe which involves the injection of holes from heavily doped ZnTe into an adjacent alloy layer(s) via graded band gap regions. Temperature-dependent Hall effect measurements on nitrogen-doped Zn(S,Se) and (Zn,Mg)(S,Se) were performed and the activation energy of nitrogen acceptors was obtained. With the use of this graded contact, room-temperature continuous-wave laser diode operation has been achieved at a threshold voltage of 5.8 V in a ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructure.