High efficiency low temperature grown Cu(In,Ga)Se₂ thin film solar cells on flexible substrates using NaF precursor layers

TLDR

The absorber was fabricated by a multi‑stage deposition at up to 420 °C, with a pre‑deposition NaF layer that improved V_oc and FF, and the process and device characterization are detailed. The flexible Cu(In,Ga)Se₂ cells achieved a total‑area efficiency of 15.9 % on polyimide foil, with NaF pre‑deposition enhancing V_oc and FF. © 2011 John Wiley & Sons, Ltd.

Abstract

Abstract We report a total‐area efficiency of 15.9% for flexible Cu(In,Ga)Se 2 thin film solar cells on polyimide foil (cell area 0.95 cm 2 ). The absorber layer was grown by a multi‐stage deposition process at a maximum nominal process temperature of 420°C. The Na was added via evaporation of a NaF layer prior to the absorber deposition leading to an enhanced V oc and FF. Growth conditions and device characterization are described. Copyright © 2011 John Wiley & Sons, Ltd.