CdZnTe Semiconductor Detectors for Spectroscopic X-ray Imaging

Abstract

Next generation high-flux X-ray imaging technology is expected to advance towards multi-color or spectroscopic imaging and will significantly expand the capabilities of the technique in a multitude of applications. Spectroscopic X-ray imaging will require energy-sensitive detector arrays. In this work we evaluated the applicability of pulse-mode CdZnTe detector arrays to high-flux spectroscopic imaging. To study the material and device performance limitations of currently available CdZnTe detectors under high-flux X-ray irradiation we designed a 2D monolithic CdZnTe test array and associated test system. The detector arrays were 16 times 16 pixel devices with 0.4 mm times 0.4 mm area pixels on a 0.5 mm pitch and were fabricated using 8.7 mm times 8.7 mm times 3.0 mm CdZnTe single crystals. We measured the high-flux performance of over 1200 such arrays with various bulk CdZnTe crystal properties using a 120 kVp X-ray source and our custom built test system. We studied the various static and dynamic charge collection effects typically not observed in low-flux applications. These included dynamic polarization, static charge steering and dynamic lateral polarization and charge steering. In parallel with the experimental effort we developed a dynamic charge transport and trapping model to describe the experimentally observed static, dynamic and transient phenomena. For the first time we demonstrated > 15 times 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> counts/s/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> count-rate for several hundred such CdZnTe detector arrays. In addition we demonstrated good < 1% short term count-rate stability of the detector arrays.