Tailoring the Electrical Properties of Inverse Silicon Opals ‐ A Step Towards Optically Amplified Silicon Solar Cells

Abstract

Inverse crystalline silicon opals (i-cSi-os) in the solid state and hydrogen-plasma passivated are studied, and charge-transport measurements reveal for the first time that their electrical properties are acceptable for device applications. The omnidirectional photonic band gap of i-cSi-os can be uniquely integrated with the semiconductivity of silicon, enhancing their photon-to-electron conversion efficiency. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.