Resistive Switching Behavior in Organic–Inorganic Hybrid CH₃NH₃PbI_3<i>−x</i>Cl<i>_x</i> Perovskite for Resistive Random Access Memory Devices

Abstract

The CH3 NH3 PbI3- x Clx organic-inorganic hybrid perovskite material demonstrates remarkable resistive switching behavior, which can be applicable in resistive random access memory devices. The simply designed Au/CH3 NH3 PbI3- x Clx /FTO structure is fabricated by a low-temperature, solution-processable method, which exhibits remarkable bipolar resistive switching and nonvolatile properties.