Chi Jung Kang

Resistive Switching Behavior in Organic–Inorganic Hybrid CH₃NH₃PbI_3<i>−x</i>Cl<i>_x</i> Perovskite for Resistive Random Access Memory Devices

Eun Ji Yoo, Miaoqiang Lyu, Jung‐Ho Yun et al. · Advanced Materials · 2015 · 548 citations

Engineering, Emerging Memory Technology, Halide Perovskites +16

The interlayer screening effect of graphene sheets investigated by Kelvin probe force microscopy

Namkyung Lee, J. W. Yoo, Yichul Choi et al. · Applied Physics Letters · 2009 · 142 citations

Materials Science, Graphene Nanomeshes, Vertical Screening Properties +13

Effect of P3HT:PCBM concentration in solvent on performances of organic solar cells

Woonhyuk Baek, Hyun Seok Yang, Tae‐Sik Yoon et al. · Solar Energy Materials and Solar Cells · 2009 · 139 citations

Materials Science, Organic Charge-transfer Compound, Chemical Engineering +10

The coexistence of threshold and memory switching characteristics of ALD HfO₂ memristor synaptic arrays for energy-efficient neuromorphic computing

Haider Abbas, Yawar Abbas, Gul Hassan et al. · Nanoscale · 2020 · 139 citations

Compliance Current-Controlled Conducting Filament Formation in Tantalum Oxide-Based RRAM Devices with Different Top Electrodes

Tae Sung Lee, Nam Joo Lee, Haider Abbas et al. · ACS Applied Electronic Materials · 2020 · 106 citations

Materials Science, Materials Engineering, Electrical Engineering +14