3D simulation of coaxial carbon nanotube field effect transistor

Abstract

We provide a model of coaxial CNTFET geometry. Coaxial devices are of special interest because their geometry allows for better electrostatics. We explore the possibilities of using non-equilibrium Green's function method to get I-V characteristics for CNTFETs. This simulator also includes a graphic user interface (GUI) of Matlab. We review the capabilities of the simulator, and give examples of typical CNTFET's 3D simulations (current-voltage characteristics are a function of parameters such as the length of CNTFET, gate thickness and temperature). The obtained I-V characteristics of the CNTFET are also presented by analytical equations.