Transparent JFETs Based on <inline-formula> <tex-math notation="LaTeX">$p$ </tex-math></inline-formula>-NiO/<inline-formula> <tex-math notation="LaTeX">$n$ </tex-math></inline-formula>-ZnO Heterojunctions

Abstract

The fabrication of all-oxide junction-FETs consisting of n-type ZnO channels and p-type NiO gate electrodes with high optical transmission in the visible spectral range is reported. The influence of the channel layer thickness on the transfer characteristics in terms of ON-voltage, current ON/OFF ratio, and subthreshold slope was investigated. Best devices showed channel mobilities of around 4 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> s <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> , ON/OFF ratios of up to 3 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> , and subthreshold slopes close to the thermal limit. The ON-voltage can be shifted from -3.5 to ~0 V when the channel thickness is decreased from 80 to 10 nm. At elevated temperatures of up to 100 °C, the devices remain fully operational. After the annealing cycle, the OFF-current is only slightly increased irreversibly. The frequency dependence of the switching behavior was investigated (gate-lag effect), and a high-frequency cutoff frequency at f <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sup> = 123 kHz was determined.