Uncovering the role of the ZnS treatment in the performance of quantum dot sensitized solar cells

Abstract

Among the third-generation photovoltaic devices, much attention is being paid to the so-called Quantum Dot sensitized Solar Cells (QDSCs). The currently poor performance of QDSCs seems to be efficiently patched by the ZnS treatment, increasing the output parameters of the devices, albeit its function remains rather unclear. Here new insights into the role of the ZnS layer on the QDSC performance are provided, revealing simultaneously the most active recombination pathways. Optical and AFM characterization confirms that the ZnS deposit covers, at least partially, both the TiO(2) nanoparticles and the QDs (CdSe). Photoanodes submitted to the ZnS treatment before and/or after the introduction of colloidal CdSe QDs were studied by electrochemical impedance spectroscopy, cyclic voltammetry and photocurrent experiments. The corresponding results prove that the passivation of the CdSe QDs rather than the blockage of the TiO(2) surface is the main factor leading to the efficiency improvement. In addition, a study of the ultrafast carrier dynamics by means of the Lens-Free Heterodyne Detection Transient Grating technique indicates that the ZnS shell also increases the rate of electron transfer. The dual role of the ZnS layer should be kept in mind in the quest for new modifiers for enhancing the performance of QDSCs.