Effect of Top Electrode Materials on the Nonvolatile Resistive Switching Characteristics of CCTO Films

Abstract

A novel material CaCu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Ti <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sub> (CCTO) for resistive random access memory (RRAM) application was prepared by sol-gel spin coating method. Our previous studies indicated that the CCTO possesses stable resistive switching behavior. In this work, the effects of the top electrode (TE) material on the resistive switching characteristics of CCTO films are investigated. It indicates the work function of the TE is an important factor on the resistive switching properties. Successive resistive switching was observed for electrode materials of Ni, Pd, and Pt. Furthermore, optimized consideration of the electrode material for RRAM is also studied.