IEEE Transactions on Electron Devices · 2007 · 37 citations · 8 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsRadio-frequency Integrated CircuitsBicmos TechnologyDevice OptimizationRf Cmos DesignRf Power Management
The optimization of the small and large signal performances of a radio frequency (RF)-LDMOS is presented via the achievement of a novel LDMOS architecture. Specific process steps are introduced into a 0.25-mum BiCMOS technology and precisely described to realize a fully salicided gate RF-LDMOS architecture. Significant improvement is obtained on the small-signal - f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> and F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> - and power performances while maintaining good dc characteristics
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High voltage thin layer devices (RESURF devices)
J.A. Appels, H.M.J. Vaes · 1979 · 520 citations
Silicon Single-electron Devices for Logic Applications
Yasuo Takahashi · 2002 · 16 citations