Semiconductor Alloy Nanoribbon Lateral Heterostructures for High‐Performance Photodetectors

Abstract

High-performance visible-light photodetectors are achieved based on single nanoribbon lateral heterostructures composed of two different semiconductor alloys epitaxially grown in the lateral direction. They reveal superior spectral response range, responsivity, Ion/Ioff ratio, and external quantum efficiency, relative to devices based on single composition structures.