IEEE Microwave and Wireless Components Letters · 2005 · 20 citations · 9 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave OscillatorsOscillatorsRadio-frequency Integrated CircuitsConversion GainHeterojunction Bipolar TransistorsMixer CircuitsMixersPhase NoisePower ConversionPower GainSelf-mixing
This letter presents a monolithic differential cross-coupled self-oscillating mixer (SOM). The SOM chip is fabricated using an InGaP/GaAs heterojunction bipolar transistor (HBT) foundry process and operates at 2.5 GHz. The chip provides voltage controlled oscillator (VCO) operation, up- and down-conversion mixing, and injection locking functionalities. The voltage down-conversion gain and the power up-conversion gain of up to 15 and 11.5 dB, respectively, are measured for the circuit. There is a compromise between obtaining a high conversion gain, and the oscillator power (-0.3 dBm for a 5-V supply) and phase noise (-84 dBc/Hz at 100 kHz). However, phase noise improvement of 32dB is observed by injection of a -30-dBm stable reference.
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A fully integrated VCO at 2 GHz
M. Zannoth, B. Kolb, J. Fenk et al. · IEEE Journal of Solid-State Circuits · 1998 · 102 citations
Emerging wireless broadband networks
J. Mikkonen, C. Corrado, C. Evci et al. · IEEE Communications Magazine · 1998 · 70 citations
Donkyu Baek, Sangjin Ko, J.-G. Kim et al. · IEEE Transactions on Microwave Theory and Techniques · 2004 · 56 citations · Full text