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Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs

Nonradiative Recombination CentersElectrical EngineeringSolid-state LightingEngineeringPhotoluminescenceLuminescence EfficiencyApplied PhysicsNew Lighting TechnologyAluminum Gallium NitrideBlue Ingan/gan LedsGan Power DeviceOptoelectronics