A Zone‐Casting Technique for Device Fabrication of Field‐Effect Transistors Based on Discotic Hexa‐<i>peri</i>‐hexabenzocoronene

Abstract

Field-effect transistors with highly ordered active layers are fabricated by zone-casting discotic dodecyl-substituted hexa-peri-hexabenzocoronene molecules onto hydrophobic substrates to form semiconducting columnar structures (see Figure). The discs form columns that possess long-range order on the scale of square centimeters, and the devices show order-of-magnitude improvements in charge-carrier mobilities over previously reported devices.