Measurement of proton induced radiation damage to CMOS transistors and p-i-n diodes

Abstract

As part of a program to develop a silicon tracking device for the Superconducting Super Collider (SSC), radiation-hard CMOS transistors and p-i-n diodes have been exposed to the 800-MeV LAMPF (Los Alamos Meson Physics Facility) proton beam. The fluences accumulated in one week corresponded to the expected radiation levels of about ten SSC years. The leakage current constants for p-i-n diodes and threshold voltage shifts for CMOS transistors are determined under different biasing conditions. The results are presented and examined in detail.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>