Effect of the ac Field Level on the Aging of the Dielectric Response in Polycrystalline BaTiO ₃

Abstract

BaTiO 3 ceramics with grain sizes from 0.6 to 60 μm and relative densities of 89% to 92% were prepared by hot forging and conventional sintering from very pure‐oxalate‐derived powder. The aging of both the dielectric constant and the dielectric loss was examined at weak and strong fields with respect to grain size and frequency. It was concluded that the main aging mechanism is the aging of hysteretic domain wall motion for coarse‐grained ceramics. At grain size of less than 1 μm, the lack of frequency and E AC dependence, along with a lower aging rate, suggests that domain motions or hysteretic domain wall motions are restricted in finegrained ceramic BaTiO 3 and contribute little to the aging.