Sub‐ppm Detection of Nerve Agents Using Chemically Functionalized Silicon Nanoribbon Field‐Effect Transistors

Abstract

A chemical receptor specific to traces of organophosphorus agents (OPs) has been synthesized and grafted to a silicon nanoribbon field-effect transistor (SiNR-FET). X-ray structures illustrate the structural modifications of the receptor upon exposure to nerve agent simulants. A highly sensitive and selective detector of OPs can be obtained by monitoring the Drain-Source current of the SiNR-FET at an optimum back-gate voltage as a function of time.