Dynamic surface anneal: activation without diffusion

Abstract

The continued scaling of devices in accordance with Moore's law requires activation of some implants such as the source-drain extensions, SDEs, with as little diffusion as possible. New options in thermal processing are described and compared. Thermal flux annealing is the regime where power density is high enough to cause local heating but not so high as to eliminate heat transfer entirely. If energy is delivered fast enough, i.e.: the power density is high enough, the surface of the wafer can reach useful annealing temperatures before the bulk temperature rises appreciably. Limited heat transfer enables the substrate as a heat sink for rapid device region cool down. Thermal homogenization on the device scale also occurs when the thermal diffusion length is a few tens of microns. Wavelengths for scanning laser are compared as well as broadband flash lamp annealing