IEEE Transactions on Electron Devices · 2007 · 61 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor PhysicsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsCapacitanceField-effect Transistor Transfer CharacteristicsInsulated-gate Field-effect TransistorsJunction CapacitanceShort-circuit CurrentSwitching Loss ReductionTransistors For Power Conversion
This paper describes a new 600-V trench-gate high-conductivity insulated gate bipolar transistor (trench HiGT) that has both a low collector-emitter saturation voltage of 1.55 V at 200 and a tough short-circuit capability of more than 10 . The trench HiGT also has better tradeoff relationship between turn-off switching loss and collector-emitter saturation voltage compared to either an insulated gate bipolar transistor (IGBT) with a planar gate or a conventional trench gate. A reverse transfer capacitance that is 50% lower than that of the planar-gate IGBT and an input capacitance that is 40% lower than that of a conventional trench gate IGBT have been obtained for the trench HiGT.
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Advanced wide cell pitch CSTBTs having light punch-through (LPT) structures
K. Nakamura, S. Kusunoki, Hiroki Nakamura et al. · 2003 · 65 citations
1200 V-trench-IGBT study with square short circuit SOA
T. Laska, F. Pfirsch, F. Hirler et al. · 2002 · 51 citations
Engineering, Electrical Engineering, Electronic Materials +13
A novel high-conductivity IGBT (HiGT) with a short circuit capability
M. Mori, Yuki Uchino, J. Sakano et al. · 2002 · 50 citations
Novel 600-V trench high-conductivity IGBT (Trench HiGT) with short-circuit capability