Publication | Closed Access
High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)
139
Citations
23
References
2007
Year
Materials ScienceElectrical EngineeringEngineeringOrganic ElectronicsAl2o3 Gate DielectricsApplied PhysicsOrganic SemiconductorCompound SemiconductorAtomic Layer DepositionSemiconductor Device
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