IEEE Photonics Technology Letters · 2005 · 15 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesIntegrated OpticsIntegrated PhotonicsOptical Communication SystemsOptical ModulatorsPhotonic Integrated CircuitsQuantum Well DevicesElectro-absorption ModulationElectro-absorption ModulatorsElectroabsorption ModulationElectroabsorption ModulatorsIntegrated Electro-optic DevicesIntegrated Optical ModulatorsLight Source TechnologySemiconductor Optical Modulators
We have developed a 1310-nm uncooled electroabsorption modulator integrated light source (EML) with an AlGaInAs multiple quantum well (MQW) active/absorption stripe, which was simultaneously grown using the narrow-stripe selective MOVPE technique and was buried with an Fe-doped InP. The Al-content MQW oxidation was effectively inhibited by using the same technique. An experiment-based evaluation of the device's performance revealed that by only changing the modulation bias voltage linearly with temperature, it was possible to achieve 10-Gb/s penalty-free operation at up to 85/spl deg/C over a 23-km single-mode fiber.
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Chung-En Zah, R. Bhat, Bhadresh Pathak et al. · IEEE Journal of Quantum Electronics · 1994 · 338 citations
Low-threshold and high-temperature operation of InGaAlAs-InP lasers
T.R. Chen, P.C. Chen, J. Ungar et al. · IEEE Photonics Technology Letters · 1997 · 54 citations
Uncooled, 10 Gb/s 1310 nm electroabsorption modulated laser
M.R. Gokhale, P. Studenkov, J. Ueng-McHale et al. · 2003 · 30 citations