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A 2D analytical model of the channel potential and threshold voltage of Double-Gate (DG) MOSFETs with vertical Gaussian doping profile
31
Citations
12
References
2009
Year
Unknown Venue
Device ModelingElectrical EngineeringEngineeringNanoelectronicsElectronic EngineeringSymmetric Double-gateApplied PhysicsChannel PotentialThreshold VoltageBias Temperature InstabilityMicroelectronicsPotential FunctionSemiconductor DeviceAnalytical Model
The paper presents a 2D analytical model for the potential function and threshold voltage of symmetric Double-Gate (DG) MOSFETs with vertical Gaussian doping profile in the channel.
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