IEEE Transactions on Electron Devices · 2007 · 25 citations · 22 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesCarrier TransportDevice CharacterizationDevice ModelingDevice SimulationField-effect TransistorsThin-film TransistorsCircuit SimulationLeakageLeakage CurrentLeakage Current AnalysisLeakage Current ModelingPhonon-assisted TransportPhonon-assisted TunnelingThin-film Transistor Modeling
Based on a generation-recombination model including the Poole-Frenkel (PF) effect and phonon-assisted tunneling, numerical analysis shows that the logarithm of generation rate for polysilicon thin-film transistors (poly-Si TFTs) working in the leakage region is linear with the square root of lower electric field and approximately linear with higher electric field over a wide temperature range (273-423 K). Therefore, an analytical expression is found to approximate the generation rate. Furthermore, a compact model for poly-Si TFT leakage current including the PF effect is developed in this paper. The proposed model is analytical without numerical calculation, and its parameters can be extracted from experimental data; hence, it is attractive for circuit simulation. The model has been verified by comparing simulated results with experimental data.
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