Nonlinear absorption and refraction in crystalline silicon in the mid‐infrared

Abstract

Abstract The wavelength dependence of the nonlinear absorption and the third order nonlinear refraction of crystalline silicon between m and m as well as at m have been measured. It was found that at all wavelengths multi‐photon and free carrier absorption can be significant. In particular nonlinear absorption can affect silicon devices designed for the mid‐infrared that require strong nonlinear response, such as for the generation of a supercontinuum.