A 2-bit MONOS nonvolatile memory cell based on asymmetric double gate MOSFET structure

Abstract

A novel 2-bit/cell nonvolatile memory (NVM) with metal-oxide-nitride-oxide-semiconductor (MONOS) asymmetric double gate (ADG) MOSFET structure is proposed. With the double gate structure, the two conducting channels provide the ability to store 2 bits in a cell. Program and erase can be performed by channel hot electron (CHE) injection and Fowler-Nordheim (FN) tunneling respectively. The read operation and the array structure of the proposed novel NVM are also studied and described in this paper.