Electron transport in niobium-silicon-niobium structures

Abstract

A model for the voltage-carrying state of semiconductor coupled superconducting weak links is presented. Characteristic elements are the Schottky barrier at the interface and a nonequilibrium population of states in the semiconductor. Experimental results of several Nb-Si-Nb structures are shown to be partial agreement with the model. Deviations are thought to be caused by neglect of multiple Andreev reflections.