Development of a silicon carbide radiation detector

Abstract

The radiation detection properties of semiconductor detectors made of 4H silicon carbide were evaluated. Both Schottky and p-n junction devices were tested. Exposure to alpha particles from a /sup 238/Pu source led to robust signals from the detectors. The resolution of the Schottky SiC detector was 5.8% (FWHM) at an energy of 294 keV, while that of the p-n junction was 6.6% (FWHM) at 260 keV. No effect of temperature in the range of 22 to 89/spl deg/C was observed on the characteristics of the /sup 238/Pu alpha-induced signal from the SiC detector. In addition, testing in a gamma field of 10,000 rad-Si h/sup -1/ showed that the alpha-induced signal was separable from the gamma signal.