Effect of Growth Temperature on InP QD Lasers

Abstract

We describe the effect of growth temperature on the optical absorption, gain, and threshold current density of 730-nm emitting, metal-organic vapor phase epitaxy (MOVPE) grown, InP-AlGaInP quantum-dot lasers. Decreasing the growth temperature from 750°C to 690°C leads to an increase in ground state absorption, while sufficient optical gain and low 300 K threshold current density is obtained in the growth temperature window between 710°C and 730°C . Wider (16 nm compared to 8 nm) interlayer barriers lead to lower threshold current density with 300 K values as low as 165 Acm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> for 2-mm-long lasers with uncoated facets.