A time-domain network analyzer which uses optoelectronic techniques

Abstract

The performance of characterization measurements using time-domain optoelectronic techniques is shown to offer many advantages and to be especially suited for the on-wafer probing of GaAs integrated circuits. A single measurement can provide broadband scattering parameters. Signal generation is achieved by the illumination of a biased picosecond photoconductor with a short optical pulse and sampling by either a photoconductive or electrooptic technique. A comparison of results using both optical sampling techniques and frequency domain measurements is made. Results are presented for example tests performed on a 28-GHz MMIC (monolithic microwave integrated circuit). Reasonable agreement was obtained in the amplitude, with some discrepancy being evident in the phase.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>