Oriented Growth of Single‐Crystalline Bi₂S₃ Nanowire Arrays

Abstract

Highly oriented single crystal Bi2S3 nanowire arrays are formed inside anodised alumina membranes (AAMs) using a new solventless approach. A high yield of pore filling is achieved by injecting the melted single source precursor liquid into the channels followed by thermolysis. The absorption profile (bandgap) of these nanowires shifts to higher energies as the mean diameter of the nanowires decreases.