Dephasing in InAs/GaAs quantum dots

Abstract

The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of $290\ifmmode\pm\else\textpm\fi{}80 \mathrm{fs}$ from spectal-hole burning and of $260\ifmmode\pm\else\textpm\fi{}20 \mathrm{fs}$ from four-wave mixing.