Multigenerational Radiation Response Trends in SONOS-based NROM Flash Memories with Neutron Latch-Up Mitigation

Abstract

Radiation testing was performed on three generations of commercial SONOS-based NROM flash memory products fabricated at technology nodes of 220 nm, 110 nm, and 90 nm. Neutron irradiation was investigated for mitigating latchup in these unhardened, commercial products. Although the behavior of the NROM memory technology appears to be consistent and well-behaved in radiation environments across multiple fabrication technologies and manufacturing technology nodes, existing commercial designs are incompatible with the requirements typically associated with space applications because of the sensitivities associated with the commercial CMOS underlayer and unhardened control circuitry.