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Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD

Materials ScienceAluminium NitrideElectrical EngineeringWide-bandgap SemiconductorEngineeringSapphire SubstratesNanoelectronicsApplied PhysicsAluminum Gallium NitrideAlinn HemtMicroelectronicsOptoelectronicsCategoryiii-v Semiconductor