IEEE Photonics Technology Letters · 1995 · 35 citations · 4 references
EngineeringElectrical EngineeringMicroelectronicsOptoelectronicsSemiconductor DevicesHigh-frequency Semiconductor DevicesIii-v SemiconductorsMicrowave Semiconductor DevicesPhotodetectorsSemiconductor HeterostructuresTerahertz PhotonicsGain-bandwidth ProductHeterostructure PhotodetectorsIntegrated PhotodetectorsP-i-n PhotodetectorsPhotodiode CircuitsPhotodiodesTerahertz PhotodetectorsTransimpedance Amplifiers
A monolithically integrated p-i-n transimpedance-amplifier photoreceiver based on an InAlAs-InGaAs HBT structure lattice-matched to InP has been designed, fabricated, and characterized. The p-i-n photodiode is implemented using the InGaAs base and collector layers of the HBT. A three-stage amplifier with a feedback resistance of 550 /spl Omega/ demonstrated a transimpedance gain of 46 dB/spl Omega/ and a bandwidth of 20 GHz, corresponding to a transimpedance-bandwidth product of 4 THz/spl Omega/. The measured -3 dB bandwidth of the integrated photoreceiver is 16 GHz, which is the highest reported to date for an InAlAs-InGaAs p-i-n/HBT monolithically integrated photoreceiver and is sufficient for 20-Gb/s operation.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Monolithic ultrahigh-speed GaAs HBT optical integrated receivers
Kenneth D. Pedrotti, N.H. Sheng, R.L. Pierson et al. · 2002 · 23 citations
A 28 GHz transimpedance preamplifier with inductive bandwidth enhancement
Montgomery, Feygenson, Yadvish et al. · 1992 · 21 citations