2012 · 18 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesPower AmplifiersRadio-frequency Integrated CircuitsBandwidthPower Amplifier DesignPower DivisionPower OutputRadio Frequency Power AmplifiersSmall-signal GainSolid-state Power AmplifiersWideband Amplifiers
A 220 GHz solid state power amplifier MMIC is presented demonstrating 58.4 mW of output power with 5.4dB compressed gain. The 8-cell amplifier has a small signal gain of 8.9 dB at 220 GHz, and 3-dB bandwidth from 206 to 242GHz. Amplifier cells are formed using a 250nm InP HBT technology and a 5um BCB thin-film, non-inverted microstrip wiring environment. Power division and combining of the eight amplifier cells is done by a 2-1 quarter wave combiner series connected to a 4-1 Dolph-Chebyshev combiner. More than 50mW of output power was observed from 215 to 225GHz.
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A 75 mW 210 GHz Power Amplifier Module
V. Radisic, K.M.K.H. Leong, Stephen Sarkozy et al. · 2011 · 40 citations
48.8 mW Multi-Cell InP HBT Amplifier with On-Wafer Power Combining at 220 GHz
T. B. Reed, M.J.W. Rodwell, Zach Griffith et al. · 2011 · 17 citations