Structural studies of a combined InAlAs–InGaAs capping layer on 1.3-μm Inas/GaAs quantum dots - Concepedia

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Structural studies of a combined InAlAs–InGaAs capping layer on 1.3-μm Inas/GaAs quantum dots

22

Citations

28

References

2005

Year

C. M. Tey, H.Y. Liu, A. G. Cullis, I M Ross, M. Hopkinson

Journal of Crystal Growth

SemiconductorsMaterials ScienceEngineeringPhysicsCombined Inalas–ingaasApplied PhysicsQuantum MaterialsStructural StudiesCompound SemiconductorSemiconductor Nanostructures

References

	Year	Citations

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