IEEE Transactions on Microwave Theory and Techniques · 1993 · 18 citations · 16 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave MeasurementsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsConversion GainConversion LossCoplanar WaveguidesGallium ArsenideInductorsMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated CircuitsParasitic Capacitance
The design and performance of single-device and balanced versions of (M)MIC GaAs FET frequency doublers from 18 GHz to 36 GHz, fabricated in purely coplanar waveguide techniques, are presented. Coplanar discontinuities which are usually neglected are taken into consideration in the analysis and design. Spiral inductors and their associated parasitic capacitance are used for impedance matching and phase shifting purposes. The simulation technique used to characterize the spiral inductors is described in detail. Measurement and simulation results show good agreement. The investigated hybrid doublers have a minimum conversion loss of 7 dB while a maximum conversion gain of 6B is predicted for the monolithic version of the doublers. They are fabricated on ceramic and gallium arsenide substrates and are simple, cost effective, and applicable in low and medium power transmitter/receiver systems.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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