Publication | Closed Access
Fast optoelectronic crosspoint electrical switching of GaAs photoconductors
10
Citations
7
References
1984
Year
PhotonicsElectrical EngineeringSemiconductor DeviceEngineeringPhotodetectorsApplied PhysicsGaas PhotoconductorsPhotoelectric MeasurementOptical SwitchingFall TimeMicroelectronicsOptoelectronicsCompound SemiconductorVariable Time-delay Method
The optoelectronic crosspoint electrical switching characteristics of GaAs photoconductors were investigated by using a variable time-delay method. Rise and fall time as short as 0.6 and 1.1 ns, respectively, were observed at the very low operating bias of 3-4 V.
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