IEEE Microwave and Guided Wave Letters · 1998 · 48 citations · 1 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave Semiconductor DevicesMicrowave System DesignRadio-frequency Integrated CircuitsAttenuatorsElectron MobilityHigh-electron-mobility TransistorsMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated Circuit DesignMonolithic Microwave Integrated CircuitsReturn LossSignal Attenuation
Radio frequency (RF) subsystems for emerging millimeter-wave applications require monolithic microwave integrated circuit (MMIC) attenuators with constant phase over the attenuation range. In this work, we present the results for a 44 GHz stepped attenuator implemented in high electron mobility transistor (HEMT) MMIC technology. Use of a switched-path topology provides a high attenuation range (>30 dB) with good phase flatness (<7/spl deg/ p-p) and return loss (>14.5 dB) over the attenuation range. The same design topology should be well suited for other frequencies throughout the upper microwave and lower millimeter-wave range.
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A 0.05- to 14-GHz MMIC 5-Bit Digital Attenuator
Ramesh K. Gupta, L. B. Holdeman, J. Potukuchi et al. · 1987 · 21 citations