Voltage-Pulse-Induced Switching Dynamics in $ \hbox{VO}_{2}$ Thin-Film Devices on Silicon

Abstract

We demonstrate the characteristics of voltage-pulse-induced out-of-plane switching driven by metal-insulator transition (MIT jump) with VO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> thin-film devices fabricated on silicon. As the peak of a triangular pulse increases, the delay time from the insulating state to the metallic state linearly decreases and is independent of change in external resistance. The intrinsic rising time is less than 170 ns. An endurance test with continuous voltage pulse shows reliability without breakdown for more than 110 h. This work contributes to correlated oxide electronics utilizing phase transition layers.