Electrical transport properties of polycrystalline p-type InSb films

Abstract

Hall coefficient and dc conductivity measurements are made on p-type polycrystalline films of InSb grown by vacuum evaporation technique on glass substrate. The grain boundary potential barrier, which is found to mainly limit the mobility of carriers is calculated as a function of film thickness. The n-type conduction is found to predominate over p-type conduction above about 250 K. The ratio of electron to hole mobility is also calculated.