Progress in Photovoltaics Research and Applications · 1994 · 87 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsThin FilmsPhotovoltaic DevicesPhotovoltaic MaterialsSemiconductor Device MaterialsSolar Cell MaterialsSolar CellsThin-film MaterialsAbsorber MaterialsCompositional GradingDoping Profile AnalysisFill FactorP-n Junction Solar CellsSolar Cell CharacterizationThin-film SemiconductorsThin-film Solar Cells
Abstract This communication reports an MgF 2 /ZnO/CdS/Cu(In,Ga)Se 2 /Mo/glass polycrystalline solar cell with a confirmed total‐area conversion efficiency of 16.4%. the thin‐film Cu(In,Ga)Se 2 absorber was fabricated by computer‐controlled physical vapor deposition (PVD) from the elemental sources. the resulting absorber has a Gal/In compositional grading that we refer to as a notch. Capacitance‐voltage (C‐V) measurements also reveal a graded doping profile in the region near the electronic p‐n junction. the enhanced device performance is characterized by an open‐circuit voltage (V oc ) of 660 mV and a particularly high fill factor (FF) of 78.7%.
5
ZnO/CdS/CuInSe2 thin-film solar cells with improved performance
Lars Stolt, Jonas Hedström, M. Ruckh et al. · Applied Physics Letters · 1993 · 463 citations
Natural Sciences, Materials Engineering, Materials Science +17
I-III-VI/sub 2/ multinary solar cells based on CuInSe/sub 2/
D. Tarrant, J. Ermer · 2002 · 20 citations